D
S
G
D
S
G
S
OT
S
2
-2
7
APL1001J
1000V
18.0A 0.60
W
ISOTOP
廬
"UL Recognized" File No. E145592 (S)
POWER MOS IV
廬
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
, l
LM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25擄C
Pulsed Drain Current
Gate-Source Voltage
1
SINGLE DIE ISOTOP
廬
PACKAGE
All Ratings: T
C
= 25擄C unless otherwise specified.
APL1001J
UNIT
Volts
Amps
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1000
18
72
鹵30
520
and Inductive Current Clamped
Total Power Dissipation @ T
C
= 25擄C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 碌A(chǔ))
On State Drain Current
2
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Y
R
A
IN
IM
L
E
R
P
4.16
-55 to 150
300
MIN
TYP
Volts
Watts
W/擄C
擄C
MAX
UNIT
Volts
Amps
Ohms
碌A(chǔ)
1000
18
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 8V)
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
0.60
25
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125擄C)
Gate-Source Leakage Current (V
GS
= 鹵30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 2.5mA)
250
鹵100
2
4
nA
Volts
THERMAL CHARACTERISTICS
Symbol
R
QJC
R
QCS
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN
TYP
MAX
UNIT
擄C/W
0.24
0.06
050-5904 Rev A 3-2000
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
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