AP9685M Datasheet

IC型號：
AP9685M
PDF描述：
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
文件大?。?/label>
75.50KB
PDF頁數(shù)：
4頁
芯片廠家：
ETC

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AP9685M

Advanced Power

Electronics Corp.

鈻?/div>

Simple Drive Requirement

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

DSS

DS(ON)

80V

45m惟

5.3A

鈻?/div>

Lower Gate Charge

鈻?/div>

Fast Switching Characteristic

SO-8

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

=25鈩?/div>

=100鈩?/div>

=25鈩?/div>

STG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Total Power Dissipation

Linear Derating Factor

Storage Temperature Range

Operating Junction Temperature Range

Rating

鹵

5.3

3.4

2.5

0.02

-55 to 150

Units

W/鈩?/div>

鈩?/div>

Thermal Data

Symbol

Rthj-a

Parameter

Thermal Resistance Junction-ambient

Max.

Value

Unit

鈩?W

Data and specifications subject to change without notice

201216031

型號

版本

描述

廠商

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