鈻?/div>
Fast Switching
D1
G2
S2
D2
D1
D2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
25V
25m惟
7A
SO-8
S1
G1
Description
D1
D2
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25鈩?/div>
I
D
@T
A
=70鈩?/div>
I
DM
P
D
@T
A
=25鈩?/div>
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
25
鹵
20
7
5.7
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/鈩?/div>
鈩?/div>
鈩?/div>
Continuous Drain Current
3
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
62.5
Unit
鈩?W
Data and specifications subject to change without notice
200305021
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