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FINAL

Am28F020A

2 Megabit (256 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

DISTINCTIVE CHARACTERISTICS

s

High performance

鈥?Access times as fast as 70 ns

s

CMOS low power consumption

鈥?30 mA maximum active current

鈥?100 碌A(chǔ) maximum standby current

鈥?No data retention power consumption

s

Compatible with JEDEC-standard byte-wide

32-pin EPROM pinouts

鈥?32-pin PDIP

鈥?32-pin PLCC

鈥?32-pin TSOP

s

100,000 write/erase cycles minimum

s

Write and erase voltage 12.0 V

鹵5%

s

Latch-up protected to 100 mA from

鈥? V to V

CC

+1 V

s

Embedded Erase Electrical Bulk Chip Erase

鈥?Five seconds typical chip erase, including

pre-programming

s

Embedded Program

鈥?14 碌s typical byte program, including time-out

鈥?4 seconds typical chip program

s

Command register architecture for

microprocessor/microcontroller compatible

write interface

s

On-chip address and data latches

s

Advanced CMOS flash memory technology

鈥?Low cost single transistor memory cell

s

Embedded algorithms for completely self-timed

write/erase operations

devices within this family that offer Embedded Algo-

rithms use the same command set. This offers

designers the flexibility to retain the same device foot-

print and command set, at any density between

256 Kbits and 2 Mbits.

AMD鈥檚 Flash technology reliably stores memory con-

tents even after 100,000 erase and program cycles.

The AMD cell is designed to optimize the erase and

programming mechanisms. In addition, the combina-

tion of advanced tunnel oxide processing and low

internal electric fields for erase and programming oper-

ations produces reliable cycling. The Am28F020A uses

a 12.0鹵5% V

PP

supply input to perform the erase and

programming functions.

The highest degree of latch-up protection is achieved

with AMD鈥檚 proprietary non-epi process. Latch-up pro-

tection is provided for stresses up to 100 mA on

address and data pins from 鈥? V to V

CC

+1 V.

AMD鈥檚 Flash technology combines years of EPROM

and EEPROM experience to produce the highest levels

of quality, reliability, and cost effectiveness. The

Am28F020A electrically erases all bits simultaneously

using Fowler-Nordheim tunneling. The bytes are

programmed one byte at a time using the EPROM

programming mechanism of hot electron injection.

GENERAL DESCRIPTION

The Am28F020A is a 2 Megabit Flash memory orga-

nized as 256 Kbytes of 8 bits each. AMD鈥檚 Flash mem-

ories offer the most cost-effective and reliable read/

write non-volatile random access memor y. The

Am28F020A is packaged in 32-pin PDIP, PLCC, and

TSOP versions. It is designed to be reprogrammed and

erased in-system or in standard EPROM programmers.

The Am28F020A is erased when shipped from

the factory.

The standard Am28F020A offers access times of as

fast as 70 ns, allowing high speed microprocessors to

operate without wait states. To eliminate bus conten-

tion, the device has separate chip enable (CE

#

) and

output enable (OE

#

) controls.

AMD鈥檚 Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F020A uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining

maximum EPROM compatibility.

T he A m2 8F0 20A i s c omp ati bl e w i th th e AM D

Am28F256A, Am28F512A, and Am28F010A Flash

memories. All devices in the Am28Fxxx family follow

the JEDEC 32-pin pinout standard. In addition, all

Publication#

17502

Rev:

D

Amendment/+1

Issue Date:

January 1998

next

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