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AM27C020 Datasheet

  • AM27C020

  • IC,EPROM,256KX8,CMOS,DIP,32PIN,CERAMIC

  • amd

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FINAL
Am27C020
2 Megabit (256 K x 8-Bit) CMOS EPROM
DISTINCTIVE CHARACTERISTICS
s
Fast access time
鈥?Speed options as fast as 55 ns
s
Low power consumption
鈥?100 碌A(chǔ) maximum CMOS standby current
s
JEDEC-approved pinout
鈥?Plug in upgrade of 1 Mbit EPROM
鈥?Easy upgrade from 28-pin JEDEC EPROMs
s
Single +5 V power supply
s
鹵10%
power supply tolerance standard
s
100% Flashrite鈩?programming
鈥?Typical programming time of 32 seconds
s
Latch-up protected to 100 mA from 鈥? V to
V
CC
+ 1 V
s
High noise immunity
s
Compact 32-pin DIP, PDIP, and PLCC packages
GENERAL DESCRIPTION
The Am27C020 is a 2 Megabit, ultraviolet erasable pro-
grammable read-only memory. It is organized as 256
Kwords by 8 bits per word, operates from a single +5 V
supply, has a static standby mode, and features fast
single address location programming. Products are
available in windowed ceramic DIP packages, as well
as plastic one time programmable (OTP) PDIP and
PLCC packages.
Data can be typically accessed in less than 55 ns, al-
lowing high-performance microprocessors to operate
without any WAIT states. The device offers separate
Output Enable (OE#) and Chip Enable (CE#) controls,
thus eliminating bus contention in a multiple bus micro-
processor system.
AMD鈥檚 CMOS process technology provides high
speed, low power, and high noise immunity. Typical
power consumption is only 100 mW in active mode,
and 100 碌W in standby mode.
All signals are TTL levels, including programming sig-
nals. Bit locations may be programmed singly, in
blocks, or at random. The device supports AMD鈥檚
Flashrite programming algorithm (100 碌s pulses), re-
sulting in a typical programming time of 32 seconds.
BLOCK DIAGRAM
V
CC
V
SS
V
PP
OE#
CE#
PGM#
Output Enable
Chip Enable
and
Prog Logic
Y
Decoder
A0鈥揂17
Address
Inputs
Data Outputs
DQ0鈥揇Q7
Output
Buffers
Y
Gating
X
Decoder
2,097,152
Bit Cell
Matrix
11507H-1
Publication#
11507
Rev:
H
Amendment/0
Issue Date:
May 1998

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