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AD500-9 Datasheet

  • AD500-9

  • Avalanche Photodiode NIR

  • 2頁

  • ETC

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AD500-9 TO52S1
Avalanche Photodiode NIR
Special characteristics:
quantum efficiency > 80 % at
760 - 910 nm
high speed, low noise
500 碌m diameter active area
low slope multiplication curve
Parameters:
Active Area
Dark Current
1)
(M = 100)
Total Capacitance
1)
(M = 100)
Breakdown Voltage U
BR
(at I
D
= 2 碌A(chǔ))
Temperature Coefficient of U
BR
Spectral Responsivity
1)
(at 905 nm, M = 100)
Cut-off Frequency
(-3dB)
Rise Time
Optimum Gain
Max. Gain
鈥淓xcess Noise鈥?factor
(M = 100)
鈥淓xcess Noise鈥?index
(M = 100)
Noise Current
(M = 100)
N.E.P.
(M = 100, 905 nm)
Operating Temperature
Storage Temperature
AD500-9 TO52S1
0.196 mm
2
脴 500 碌m
max. 5 nA
typ. 0.5 - 1 nA
typ. 1.2 pF
120 鈥?300 V
typ. > 200 V
typ. 1.55 V/K
min. 55 A/W
typ. 60 A/W
typ. 0.5 GHz
typ. 550 ps
50 - 60
> 200
Package (TO52S1):
CASE
4
3
1
45擄
ANODE
鈭?/div>
2.54
鈭?/div>
5.4 鹵 0.2
CATHODE
鈭?/div>
4.7 鹵 0.1
0.9 鹵 0.3
鈭?/div>
2.0 min.
3.6 鹵 0.2
sensitive
surface
typ. 2.5
typ. 0.2
typ. 1 pA/Hz
1/2
typ. 2* 10
-14
W/Hz
1/2
-20 ... +70 擄C
-60 ... +100 擄C
2.7 鹵 0.2
0.5 max.
0.4 max.
鈭?/div>
0.45
Chip: AD500-9
diam. active area: 100 碌m
1) measurement conditions:
Setup of photo current 10 nA at M = 1 and irradiation by an IRED
(880 nm, 80 nm bandwith).
Increase the photo current up to 1 碌A(chǔ), (M = 100) by internal multiplication
due to an increasing bias voltage.
3
1
view without
window cap
4
www.silicon-sensor.com
Version: 05-04-29
Specification before: SSO-AD-500-9-TO52-S1
www.pacific-sensor.com
13 鹵 1.0
0.35 鹵 0.2
鈭?/div>
3.0 鹵 0.1

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