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ACTSF512K16 Datasheet

  • ACTSF512K16

  • ACT-SF512K16 High Speed 512Kx16 SRAM/FLASH Multichip Module

  • 171.69KB

  • 11頁

  • AEROFLEX

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ACT鈥揝F512K16 High Speed
512Kx16 SRAM/FLASH Multichip Module
CIRCUIT TECHNOLOGY
FEATURES
www.aeroflex.com
s
Packaging 鈥?Hermetic Ceramic
s
2 鈥?512K x 8 SRAMs & 2 鈥?512K x 8 Flash Die in
One MCM
s
Access Times of 25ns (SRAM) and 60ns (Flash)
or
35ns (SRAM) and 70 or 90ns (Flash)
s
512K x 16 SRAM
s
512K x 16 5V Flash
s
Organized as 512K x 16 of SRAM and 512K x 16 of
Flash Memory with Separate Data Buses
s
Both Blocks of Memory are User Configurable as
1M x 8
s
Low Power CMOS
s
Input and Output TTL Compatible Design
s
MIL-PRF-38534 Compliant MCMs Available
s
Decoupling Capacitors and Multiple Grounds for Low
Noise
s
Industrial and Military Temperature Ranges
s
Industry Standard Pinouts
Note: Programming information available upon request
66 Pin, 1.08" x 1.08" x .160" PGA Type, No Shoulder,
Aeroflex code# "P3"
q
66 Pin, 1.08" x 1.08" x .185" PGA Type, With
Shoulder, Aeroflex code# "P7"
q
68 Lead, .94" x .94" x .140" Single-Cavity Small
Outline Gull Wing, Aeroflex code# "F18"
(Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)
s
DESC SMD Pending 鈥?5962-96901
q
FLASH MEMORY FEATURES
s
Sector Architecture (Each Die)
s
s
s
s
s
Equal Sectors of 64K bytes each
q
Any combination of sectors can be erased with one
command sequence.
+5V Programing, 5V 鹵10% Supply
Embedded Erase and Program Algorithms
Hardware and Software Write Protection
Internal Program Control Time.
10,000 Erase / Program Cycles
q
8
Block Diagram 鈥?PGA Type Packages (P3 & P7) & CQFP (F18)
Pin Description
SWE
1
SCE
1
SWE
2
SCE
2
FWE
1
FCE
1
FWE
2
FCE
2
FI/O
0-15
OE
A
0
鈥?/div>
A
18
512Kx8
SRAM
8
SI/O
0-7
512Kx8
SRAM
8
SI/O
8-15
512Kx8
Flash
8
FI/O
0-7
512Kx8
Flash
8
FI/O
8-15
SI/O
0-15
A
0鈥?8
FWE
1-2
Flash Data I/O
SRAM Data I/O
Address Inputs
Flash Write Enables
SWE
1-2
SRAM Write Enables
FCE
1-2
SCE
1-2
OE
NC
V
CC
GND
Flash Chip Enables
SRAM Chip Enables
Output Enable
Not Connected
Power Supply
Ground
eroflex Circuit Technology - Advanced Multichip Modules 漏 SCD1663 REV A 4/28/98

ACTSF512K16相關(guān)型號(hào)PDF文件下載

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  • 英文版
    Radiation Hardened Quad 2-Input NAND Gate
    INTERSIL
  • 英文版
    Radiation Hardened Quad 2-Input NAND Gate
    INTERSIL [...
  • 英文版
    Radiation Hardened Quad 2-Input NAND Gate
    INTERSIL
  • 英文版
    Radiation Hardened Quad 2-Input NAND Gate
    INTERSIL [...
  • 英文版
    Radiation Hardened Quad 2-Input AND Gate
    INTERSIL
  • 英文版
    Radiation Hardened Quad 2-Input AND Gate
    INTERSIL [...
  • 英文版
    Radiation Hardened Quad 2-Input AND Gate
    INTERSIL
  • 英文版
    Radiation Hardened Quad 2-Input AND Gate
    INTERSIL [...
  • 英文版
    Radiation Hardened Triple Three-Input NAND Gate
    INTERSIL
  • 英文版
    Radiation Hardened Triple Three-Input NAND Gate
    INTERSIL [...
  • 英文版
    Radiation Hardened Triple Three-Input NAND Gate
    INTERSIL
  • 英文版
    Radiation Hardened Triple Three-Input NAND Gate
    INTERSIL [...
  • 英文版
    Radiation Hardened Dual 4-Input NAND Gate
    INTERSIL [...
  • 英文版
    Radiation Hardened Dual 4-Input NAND Gate
    INTERSIL [...
  • 英文版
    Radiation Hardened Dual D Flip Flop with Set and Reset
    INTERSIL
  • 英文版
    Radiation Hardened Dual D Flip Flop with Set and Reset
    INTERSIL [...
  • 英文版
    Radiation Hardened Dual D Flip Flop with Set and Reset
    INTERSIL
  • 英文版
    Radiation Hardened Dual D Flip Flop with Set and Reset
    INTERSIL [...
  • 英文版
    Radiation Hardened Quad 2-Input Exclusive OR Gate
    INTERSIL
  • 英文版
    Radiation Hardened Quad 2-Input Exclusive OR Gate
    INTERSIL [...

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