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AAT8401IGY-T1 Datasheet

  • AAT8401IGY-T1

  • 20V P-Channel Power MOSFET

  • 6頁(yè)

  • ANALOGICTECH

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20V P-Channel Power MOSFET
General Description
The AAT8401 is a low threshold MOSFET designed
for the battery, cell phone, and PDA markets. Using
AnalogicTech鈩⑩€檚 ultra high density proprietary
TrenchDMOS鈩?technology, this product demon-
strates high power handling and small size.
AAT8401
Features
鈥?/div>
鈥?/div>
鈥?/div>
V
DS(MAX)
= -20V
I
D(MAX)
1
= -2.4A @ 25擄C
Low R
DS(ON)
:
鈥?100 m鈩?@ V
GS
= -4.5V
鈥?175 m鈩?@ V
GS
= -2.5V
Applications
鈥?/div>
鈥?/div>
鈥?/div>
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
SC59 Package
Top View
D
3
Preliminary Information
1
G
2
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
A
=25擄C unless otherwise noted)
Value
-20
鹵12
鹵2.4
鹵2.0
鹵9
-0.9
1.0
0.6
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150擄C
1
Units
V
T
A
= 25擄C
T
A
= 70擄C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
Maximum Power Dissipation
1
A
T
A
= 25擄C
T
A
= 70擄C
W
擄C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Symbol
R
胃JA
R
胃JA2
R
胃JF
Description
Typical Junction-to-Ambient steady state
1
Maximum Junction-to-Ambient t<5 seconds
Typical Junction-to-Foot
1
1
Value
145
125
50
Units
擄C/W
擄C/W
擄C/W
8401.2003.06.0.61
1

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