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AAT8343IDU-T1 Datasheet

  • AAT8343IDU-T1

  • 20V P-Channel Power MOSFET

  • 6頁

  • ANALOGICTECH

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AAT8343
20V P-Channel Power MOSFET
General Description
The AAT8343 is a low threshold P-channel MOS-
FET designed for the battery, cell phone, and PDA
markets. Using AnalogicTech's ultra-high-density
proprietary TrenchDMOS鈩?technology, this product
demonstrates high power handling and small size.
Features
鈥?/div>
鈥?/div>
鈥?/div>
Drain-Source Voltage (max): -20V
Continuous Drain Current
1
(max):
-4.5A @ 25擄C
Low On-Resistance:
鈥?60m鈩?@ V
GS
= -4.5V
鈥?110m鈩?@ V
GS
= -2.5V
Applications
鈥?/div>
鈥?/div>
鈥?/div>
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
TSOP-6 Package
Top View
D
6
D
5
S
4
Absolute Maximum Ratings
T
A
= 25擄C, unless otherwise noted.
Symbol
V
DS
V
GS
I
D
I
DM
I
S
T
J
T
STG
1
D
2
D
3
G
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
= 150擄C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
1
Operating Junction Temperature Range
Storage Temperature Range
T
A
= 25擄C
T
A
= 70擄C
Value
-20
鹵12
鹵4.5
鹵3.6
鹵16
-1.3
-55 to 150
-55 to 150
Units
V
A
擄C
擄C
Thermal Characteristics
1
Symbol
R
胃JA
R
胃JA2
R
胃JF
P
D
Description
Junction-to-Ambient Steady State
Junction-to-Ambient t<5 Seconds
Junction-to-Foot
Maximum Power Dissipation
T
A
= 25擄C
T
A
= 70擄C
Typ
95
51
25
Max
115
62
30
2.0
1.3
Units
擄C/W
擄C/W
擄C/W
W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
胃JF
+ R
胃FA
= R
胃JA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
胃JF
is guaranteed by design; however,
R
胃CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300碌s.
8343.2005.04.1.0
1

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