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MAC997 Series

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

Designed for use in solid state relays, MPU interface, TTL logic and

any other light industrial or consumer application. Supplied in an

inexpensive TO鈥?2 package which is readily adaptable for use in

automatic insertion equipment.

鈥?/div>

One鈥揚(yáng)iece, Injection鈥揗olded Package

鈥?/div>

Blocking Voltage to 600 Volts

鈥?/div>

Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all

possible Combinations of Trigger Sources, and especially for Circuits

that Source Gate Drives

鈥?/div>

All Diffused and Glassivated Junctions for Maximum Uniformity of

Parameters and Reliability

鈥?/div>

Improved Noise Immunity (dv/dt Minimum of 20 V/碌sec at 110擄C)

鈥?/div>

Commutating di/dt of 1.6 Amps/msec at 110擄C

鈥?/div>

High Surge Current of 8 Amps

鈥?/div>

Device Marking: Device Type, e.g., for MAC997A6: MAC7A6, Date

Code

MAXIMUM RATINGS

(TJ = 25擄C unless otherwise noted)

Rating

Peak Repetitive Off-State Voltage

(TJ = 鈥?0 to +110擄C)(1)

Sine Wave 50 to 60 Hz, Gate Open

MAC997A6,B6

MAC997A8,B8

On-State RMS Current

Full Cycle Sine Wave 50 to 60 Hz

(TC = +50擄C)

Peak Non鈥揜epetitive Surge Current

One Full Cycle, Sine Wave 60 Hz

(TC = 110擄C)

Circuit Fusing Considerations (t = 8.3 ms)

Peak Gate Voltage

(t

2.0

m

s, TC = +80擄C)

Symbol

VDRM,

VRRM

400

600

IT(RMS)

0.8

Amp

Value

Unit

Volts

1

2

3

Preferred Device

http://onsemi.com

TRIACS

0.8 AMPERE RMS

400 thru 600 VOLTS

MT2

G

MT1

TO鈥?2 (TO鈥?26AA)

CASE 029

STYLE 12

PIN ASSIGNMENT

ITSM

8.0

Amps

1

2

I2t

VGM

PGM

PG(AV)

IGM

TJ

Tstg

.26

5.0

0.1

1.0

鈥?0 to

+110

鈥?0 to

+150

A2s

Volts

3

Main Terminal 1

Gate

Main Terminal 2

v

ORDERING INFORMATION

Watts

Watt

Preferred

devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 8 of this data sheet.

Peak Gate Power

(t

2.0

m

s, TC = +80擄C)

Average Gate Power

(TC = 80擄C, t

8.3 ms)

v

Peak Gate Current

(t

2.0

m

s, TC = +80擄C)

Operating Junction Temperature Range

Storage Temperature Range

Amp

擄C

(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

漏

Semiconductor Components Industries, LLC, 2000

1

May, 2000 鈥?Rev. 2

Publication Order Number:

MAC997/D

型號

版本

描述

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