A64E16161
Preliminary
Features
n
Operating voltage: 1.65V to 2.2V
n
Access times:
Address Access , t
AA
= 70 ns (max.)
Page Mode Address Access, t
PAA
= 25ns (max)
n
Current:
Operating Current (Icc2) : 20mA (max.)
Standby Current (Isb1) : 60uA (max)
Power Down Standby Current (Isb2) : 10碌A(chǔ) (max.)
n
Fully SRAM compatible operation
n
Full static operation, no clock or refreshing required
n
All inputs and outputs are directly TTL-compatible
n
Common I/O using three-state output
n
Support 3 distinct operation modes for reducing standby
power :
Reduced Memory Size Operation (8M,16M,24M,32M)
Partial Array Refresh (8M,16M,24M)
Deep Power Down Mode
n
Page Mode Read/Write Operation by 8 words
n
Industrial operating temperature range: -25擄C to +85擄C
for -I
n
Available in 48-ball CSP (6X8) package.
2M X 16 Bit Low Voltage Super RAM
TM
General Description
The A64E16161 is a low operating current 33,554,432-bit
Super RAM organized as 2,097,152 words by 16 bits and
operates on low power supply voltage from 1.65V to
2.2V. It is built using AMIC鈥?high performance CMOS
s
DRAM process.Using hidden refresh technique, the
A64E16161 provides a 100% compatible asynchronous
interface.
Inputs and three-state outputs are TTL compatible and allow
for direct interfacing with common system bus structures.
The chip enable input is provided for POWER-DOWN,
device enable. Two byte enable inputs and an output enable
input are included for easy interfacing.
This A64E16161 is suited for low power application such as
mobile phone and PDA or other battery-operated handheld
device.
Pin Configuration
n
Mini BGA (6X8) Top View
1
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
VSS
VCC
I/O
14
I/O
15
A18
2
OE
3
A0
A3
A5
A17
GND
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CE1
I/O
1
I/O
3
I/O
4
I/O
5
WE
A11
6
CE2
I/O
0
I/O
2
VCC
VSS
I/O
6
I/O
7
A20
HB
I/O
10
I/O
11
I/O
12
I/O
13
A19
A8
A64E16161G
PRELIMINARY
(December, 2002, Version 0.0)
AMIC Technology, Corp.
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