A45-1/SMA45-1
1000 TO 4000 MHz
CASCADABLE AMPLIFIER
路 WIDE BANDWIDTH
路 HIGH GAIN 17.5 dB (TYP.)
路 LOW NOISE: 4.1 dB (TYP.)
路 GaAs FET DESIGN
Specifications (Rev. Date: 1/01)*
Characteristics
Frequency
Small Signal Gain (min.)
Gain Flatness (max.)
Reverse Isolation
Noise Figure (max.)
Power Output @ 1 dB comp. (min.)
IP3
IP2
Second Order Harmonic IP
VSWR Input / Output (max.)
DC Current @ 15 Volts (max.)
Typical
0擄 to 50擄C
擄
擄
Typical Performance @ 25擄C
Guaranteed
-54擄 to +85擄C
擄
擄
0.8-4.2 GHz
17.5 dB
鹵0.6 dB
36 dB
4.0 dB
13.0 dBm
+26 dBm
+33 dBm
+40 dBm
1.8:1 / 1.8:1
65 mA
1.0-4.0 GHz
16.5 dB
鹵0.8 dB
5.0 dB
12.5 dBm
1.0-4.0 GHz
15.5 dB
鹵1.0 dB
5.5 dB
12.0 dBm
1.9:1 / 1.9:1
75 mA
2.0:1 / 2.0:1
80 mA
* Measured in a 50-ohm system at +5 Vdc Nominal. Subject to change without notice.
Absolute Maximum Ratings
Storage Temperature
Max. Case Temperature
Max. DC Voltage
Max. Continuous RF Input Power
Max. Short Term RF Input Power (1 minute max.)
Max. Peak Power (3
碌sec
max.)
鈥淪鈥?Series Burn-in Temperature (Case)
-65擄 to +125擄C
125擄C
+6 Volts
+13 dBm
100 mW
0.25 W
125擄C
Thermal Data: V
cc
= 15 Vdc
Thermal Resistance
胃
jc
Transistor Power Dissipation P
d
Junction Temperature Rise Above Case T
jc
132擄C/W
0.171 W
23擄C
Outline Drawings
Package
Figure
Model
TO-8
BG
A45-1
Surface Mount
AA
SMA45-1
SMA Connectorized
CE
CA45-1
Specifications subject to change without notice.
鈥?/div>
North America: 1-800-366-2266
Visit www.macom.com for complete contact and product information.
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