mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
T-MAX鈩?/div>
TO-264
LVR
鈥?TO-264
MAX
Package
鈥?Faster Switching
鈥?Lower Leakage
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
6
鈥?Avalanche Energy Rated
D
G
S
All Ratings: T
C
= 25擄C unless otherwise specified.
APT20M18B2VR_LVR
UNIT
Volts
Amps
200
@ T
C
= 25擄C
100
400
鹵30
鹵40
625
5.00
-55 to 150
300
100
50
3000
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25擄C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/擄C
擄C
Amps
mJ
(Repetitive and Non-Repetitive)
1
4
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250碌A(chǔ))
Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT
Volts
200
0.018
25
250
鹵100
2
4
(V
GS
= 10V, I
D
= 50A)
Ohms
碌A(chǔ)
nA
Volts
5-2004
050-5910 Rev A
Zero Gate Voltage Drain Current (V
DS
= 200V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 160V, V
GS
= 0V, T
C
= 125擄C)
Gate-Source Leakage Current (V
GS
= 鹵30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
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