2SA1812 / 2SA1727 / 2SA1776
Transistors
High-voltage Switching Transistor
( 400V, 0.5A)
2SA1812 / 2SA1727 / 2SA1776
Features
1) High breakdown voltage, BV
CEO
= 400V.
2) Low saturation voltage, typically V
CE (sat)
= 0.3V at I
C
/ I
B
= 100mA / 10mA.
3) High switching speed, typically tf : 1 s at I
C
= 100mA.
4) Wide SOA (safe operating area).
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SA1812
Collector power
dissipation
2SA1727
2SA1776
Junction temperature
Storage temperature
Tj
Tstg
P
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
400
400
7
0.5
1.0
0.5
2
1
10
1
150
55 to
+
150
Unit
V
V
V
A (DC)
A (Pulse)
W
W
W
W (Tc 25
擄C
)
W
1
2
3
擄C
擄C
1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board.
3 When t = 1.7mm and the foil collector area on the PC board is 1cm
2
or greater.
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denotes
h
FE
2SA1812
MPT3
PQ
AJ
T100
3000
2SA1727
CPT3
PQ
TL
3000
2SA1776
ATV
PQ
TV2
2500
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current tranfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Cob
t
on
t
stg
t
f
12
18
0.6
2.7
1
82
150
Min.
400
400
7
10
10
270
1
1.2
Typ.
Max.
Unit
V
V
V
A
A
V
V
MHz
pF
s
s
s
I
C
I
C
I
E
V
CB
V
EB
V
CE
I
C
/I
B
I
C
/I
B
V
CB
V
CE
50 A
1mA
50 A
400V
6V
5V , I
C
50mA
100mA / 10mA
100mA / 10mA
5V , I
E
10V , I
E
50mA , f
0A , f
5MHz
1MHz
Conditions
I
C
100mA, R
L
1.5k
I
B1
I
B2
10mA
V
CC
to
150V
Rev.A
1/3
1
2
3
4
