9BSE55
55 Watts, 25 Volts
CELLULAR 850-960 MHz
GENERAL DESCRIPTION
The 9BSE55 is a COMMON BASE, silicon bipolar transistor capable of
providing 55 watts of output power at 960 MHz. The device is designed for
cellular base station applications in the 850 to 960 MHz frequency range.
Gold metallization and emitter ballasting provide a highly reliable and rugged
device which can be used for driver stages or in the output stage of an
amplifier.
CASE OUTLINE
55CW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C鹿
Maximum Voltage and Current
BVces Collector to Emiter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
135 Watts
50 Volts
4.0 Volts
8.0 A
- 65 to +150
o
C
+200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
鹿
SYMBOL
Pout
Pin
Pg虜
畏
c虜
VSWR虜
CHARACTERISTICS
Power Output
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 900 MHz
Vcc = 25 Volts
MIN
55
8.9
TYP
60
7.0
9.3
55
4.4:1
MAX
UNITS
Watts
Watts
dB
%
BVebo
BVces
Ccb
h
FE
胃
jc
Voltage Emitter to Base
Voltage Collector to Emitter
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
Ie = 15 mA
Ic = 50 mA
Ic = 3 mA, Vce = 5V
4.0
50
50
10
1.3
Volts
Volts
pF
o
C/W
Note 1: Tc = 25
C unless otherwise noted
Note 2: At Rated Output Power
Initial Issue March 1995
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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