鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
EXTREMELY LOW GATE CHARGE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
SO-8
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STS5N150
MARKING
S5N150
PACKAGE
SO-8
PACKAGING
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Storage Temperature
Operating Junction Temperature
Value
150
150
鹵 20
5
3
20
2.5
-55 to 150
Unit
V
V
V
A
A
A
W
擄C
(鈥?
Pulse width limited by safe operating area.
June 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
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