PDF預(yù)覽

• 1
• 2
• 3
• 4
• 5
• 6
• 7
• 8
• 9
• 10
• 11
• 12
• 13
• 14
• 15
• 16

ST93CS46

ST93CS47

1K (64 x 16) SERIAL MICROWIRE EEPROM

NOT FOR NEW DESIGN

1 MILLION ERASE/WRITE CYCLES, with

40 YEARS DATA RETENTION

SELF-TIMED PROGRAMMING CYCLE with

AUTO-ERASE

READY/BUSY SIGNAL DURING

PROGRAMMING

SINGLE SUPPLY VOLTAGE

鈥?3V to 5.5V for the ST93CS46

鈥?2.5V to 5.5V for the ST93CS47

USER DEFINED WRITE PROTECTED AREA

PAGE WRITE MODE (4 WORDS)

SEQUENTIAL READ OPERATION

5ms TYPICAL PROGRAMMING TIME

ST93CS46 and ST93CS47 are replaced by

the M93S46

8

1

PSDIP8 (B)

0.4mm Frame

8

1

SO8 (M)

150mil Width

Figure 1. Logic Diagram

DESCRIPTION

The ST93CS46 and ST93CS47 are 1K bit Electri-

cally Erasable Programmable Memory (EEPROM)

fabricated with SGS-THOMSON鈥檚 High Endurance

Single Polysilicon CMOS technology. The memory

is accessed through a serial input D and output Q.

The 1K bit memory is organized as 64 x 16 bit

words.The memory is accessed by a set of instruc-

tions which include Read, Write, Page Write, Write

All and instructions used to set the memory protec-

tion. A Read instruction loads the address of the

first word to be read into an internal address

pointer.

Table 1. Signal Names

S

D

Q

C

PRE

W

V

CC

V

SS

Chip Select Input

Serial Data Input

Serial Data Output

Serial Clock

Protect Enable

Write Enable

Supply Voltage

Ground

VCC

D

C

S

PRE

W

ST93CS46

ST93CS47

Q

VSS

AI00884B

June 1997

This is information on a product still in production bu t not recommended for new de signs.

1/16

next

93CS46相關(guān)型號(hào)PDF文件下載

• 型號(hào)
  版本
  描述
  廠商
  下載
• 93CS46
  英文版
  1K 64 x 16 SERIAL MICROWIRE EEPROM
  
  93CS46
• 93CS46
  英文版
  1K 64 x 16 SERIAL MICROWIRE EEPROM
  STMICROELECTRON...
  93CS46

您可能感興趣的PDF文件資料

• 93CS46
• 93CS46

熱門IC型號(hào)推薦

• 9014M-C
• 93LC46B-I/SN
• 93LC46B/SN
• 93LC46BT-I/SN
• 93LC46B-I/P
• 93LC66BT-I/SN
• 93LC66B-I/SN