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81C56 Datasheet

  • 81C56

  • Radiation Hardened 256 x 8 CMOS RAM

  • 14頁

  • INTERSIL   INTERSIL

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HS-81C55RH,
HS-81C56RH
March 1996
Radiation Hardened
256 x 8 CMOS RAM
Description
The HS-81C55/56RH are radiation hardened RAM and I/O
chips fabricated using the Intersil radiation hardened Self-
Aligned Junction Isolated (SAJI) silicon gate technology.
Latch-up free operation is achieved by the use of epitaxial
starting material to eliminate the parasitic SCR effect seen in
conventional bulk CMOS devices.
The HS-81C55/56RH is intended for use with the
HS-80C85RH radiation hardened microprocessor system. The
RAM portion is designed as 2048 static cells organized as 256
x 8. A maximum post irradiation access time of 500ns allows
the HS-81C55/56RH to be used with the HS-80C85RH CPU
without any wait states. The HS-81C55RH requires an active
low chip enable while the HS-81C56RH requires an active high
chip enable. These chips are designed for operation utilizing a
single 5V power supply.
Features
鈥?Devices QML Quali鏗乪d in Accordance with
MIL-PRF-38535
鈥?Detailed Electrical and Screening Requirements are
Contained in SMD# 5962-95818 and Intersil鈥?QM Plan
鈥?Radiation Hardened EPI-CMOS
- Parametrics Guaranteed 1 x 10
5
RAD(Si)
- Transient Upset > 1 x 10
8
RAD(Si)/s
- Latch-Up Free > 1 x 10
12
RAD(Si)/s
鈥?Electrically Equivalent to Sandia SA 3001
鈥?Pin Compatible with Intel 8155/56
鈥?Bus Compatible with HS-80C85RH
鈥?Single 5V Power Supply
鈥?Low Standby Current 200碌A(chǔ) Max
鈥?Low Operating Current 2mA/MHz
鈥?Completely Static Design
鈥?Internal Address Latches
鈥?Two Programmable 8-Bit I/O Ports
鈥?One Programmable 6-Bit I/O Port
鈥?Programmable 14-Bit Binary Counter/Timer
鈥?Multiplexed Address and Data Bus
鈥?Self Aligned Junction Isolated (SAJI) Process
鈥?Military Temperature Range -55
o
C to +125
o
C
Functional Diagram
IO/M
AD0 - AD7
CE OR CE鈥?/div>
ALE
RD
WR
RESET
TIMER CLK
TIMER OUT
鈥?1C55RH
= CE
81C56RH = CE
TIMER
C
PORT C
8
PC0 - PC5
VDD (10V)
GND
256 x 8
STATIC
RAM
A
PORT A
8
PA0 - PA7
PORT B
B
8
PB0 - PB7
Ordering Information
PART NUMBER
5962R9XXXX01QRC
5962R9XXXX01VRC
5962R9XXXX01QXC
5962R9XXXX01VXC
5962R9XXXX02QRC
5962R9XXXX02VRC
5962R9XXXX02QXC
5962R9XXXX02VXC
HS1-81C55RH/Sample
HS9-81C55RH/Sample
HS1-81C56RH/Sample
HS9-81C56RH/Sample
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
MIL-PRF-38535 Level Q
MIL-PRF-38535 Level V
MIL-PRF-38535 Level Q
MIL-PRF-38535 Level V
MIL-PRF-38535 Level Q
MIL-PRF-38535 Level V
MIL-PRF-38535 Level Q
MIL-PRF-38535 Level V
Sample
Sample
Sample
Sample
PACKAGE
40 Lead SBDIP
40 Lead SBDIP
42 Lead Ceramic Flatpack
42 Lead Ceramic Flatpack
40 Lead SBDIP
40 Lead SBDIP
42 Lead Ceramic Flatpack
42 Lead Ceramic Flatpack
40 Lead SBDIP
42 Lead Ceramic Flatpack
40 Lead SBDIP
42 Lead Ceramic Flatpack
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
Spec Number
File Number
1
518056
3039.1

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    Radiation Hardened 256 x 8 CMOS RAM
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