M58CR032C
M58CR032D
32 Mbit (2Mb x 16, Dual Bank, Burst )
1.8V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
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SUPPLY VOLTAGE
鈥?V
DD
= 1.65V to 2V for Program, Erase and
Read
鈥?V
DDQ
= 1.65V to 3.3V for I/O Buffers
鈥?V
PP
= 12V for fast Program (optional)
s
Figure 1. Packages
SYNCHRONOUS / ASYNCHRONOUS READ
鈥?Burst mode Read: 54MHz
鈥?Page mode Read (4 Words Page)
鈥?Random Access: 85, 100, 120 ns
FBGA
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PROGRAMMING TIME
鈥?10碌s by Word typical
鈥?Double/Quadruple Word programming option
TFBGA56 (ZB)
6.5 x 10 mm
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MEMORY BLOCKS
鈥?Dual Bank Memory Array: 8/24 Mbit
鈥?Parameter Blocks (Top or Bottom location)
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DUAL OPERATIONS
鈥?Read in one Bank while Program or Erase in
other
鈥?No delay between Read and Write operations
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ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 20h
鈥?Top Device Code, M58CR032C: 88C8h
鈥?Bottom Device Code, M58CR032D: 88C9h
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BLOCK LOCKING
鈥?All blocks locked at Power up
鈥?Any combination of blocks can be locked
鈥?WP for Block Lock-Down
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SECURITY
鈥?64 bit user programmable OTP cells
鈥?64 bit unique device identifier
鈥?One parameter block permanently lockable
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COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
September 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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