Si4565DY
New Product
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
40
FEATURES
I
D
(A)
5.2
4.9
鈭?.5
鈭?.9
r
DS(on)
(W)
0.040 @ V
GS
= 10 V
0.045 @ V
GS
= 4.5 V
0.054 @ V
GS
=
鈭?0
V
0.072 @ V
GS
=
鈭?.5
V
Q
g
(Typ)
8
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
D
UIS Tested
APPLICATIONS
D
CCFL Inverter
P-Channel
P Channel
鈭?0
40
9
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
D
2
G
1
D
1
S
2
G
2
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
Ordering Information: Si4565DY鈥擡3
Si4565DY-T1鈥擡3 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipatio
a
Conduction)
a
L = 0 1 mH
0.1
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
P-Channel
10 secs
Steady State
鈭?0
"16
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
10 secs
Steady State
40
"12
Unit
V
5.2
4.2
1.7
13
8.5
2.0
1.3
3.9
3.1
30
0.9
鈭?.5
鈭?.6
鈭?.7
16
13
鈭?.3
鈭?.7
A
鈭?.9
mJ
1.1
0.7
W
_C
1.1
0.7
鈭?5
to 150
2
1.3
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1鈥?x 1鈥?FR4 Board.
Document Number: 73224
S-50033鈥擱ev. A, 17-Jan-05
www.vishay.com
t
v
10 sec
Steady State
Steady State
P-Channel
Typ
50
85
30
Symbol
R
thJA
R
thJF
Typ
52
90
32
Max
62.5
110
40
Max
62.5
110
40
Unit
_C/W
C/W
1