Specification Comparison
Vishay Siliconix
Si4804BDY vs. Si4804DY
Description: Dual N-Channel, 30-V (D-S) MOSFET
Package:
SOIC-8
Pin Out:
Identical
Part Number Replacements:
Si4804BDY Replaces Si4804DY
Si4804BDY鈥擡3 (Lead Free version) Replaces Si4804DY
Si4804BDY-T1 Replaces Si4804DY-T1
Si4804BDY-T1鈥擡3 (Lead Free version) Replaces Si4804DY-T1
Summary of Performance:
The Si4804BDY is the replacement for the original Si4804DY; both parts perform identically including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_C
UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (MOSFET Diode Conduction)
Power Dissipation
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
j
and T
stg
R
thJA
Si4804BDY
30
"20
7.5
6
30
2.3
1.7
2.0
鈭?5
to 150
62.5
Si4804DY
30
"20
7.5
6
20
1.7
2.0
1.3
鈭?5
to 150
62.5
Unit
V
A
W
_C
_C/W
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
SPECIFICATIONS (T
J
= 25
_C
UNLESS OTHERWISE NOTED)
Si4804BDY
Parameter
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Drain Source On Resistance
Forward Transconductance
Diode Forward Voltage
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
V
G(th)
I
GSS
I
DSS
I
D(on)
r
D ( )
Ds(on)
g
fs
V
SD
20
0.017
0.024
19
0.75
1.2
0.022
0.030
0.8
3.0
"100
1
20
0.018
0.024
22
0.8
1.2
0.022
0.030
0.8
"100
1
V
nA
mA
A
W
S
V
Si4804DY
Max
Min
Typ
Max
Unit
Symbol
Min
Typ
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Qg
Qgs
Qgd
R
g
0.5
7
2.9
2.5
1.5
2.6
11
13
2
2.7
NS
W
20
nC
Switching
Turn-On Time
Turn-Off
Turn Off Time
Source-Drain Reverse Recovery Time
NS denotes parameter not specified in original data sheet.
Document Number: 72893
22-Mar-04
www.vishay.com
t
d(on)
t
r
t
d(off)
t
f
t
rr
9
10
19
9
35
15
17
30
15
55
8
10
21
10
40
16
20
40
20
80
ns
1
VISHAY
1
