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72299 Datasheet

  • 72299

  • Dual P-Channel 30-V (D-S) MOSFET

  • 3頁(yè)

  • VISHAY   VISHAY

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SPICE Device Model Si4921DY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
CHARACTERISTICS
鈥?/div>
P-Channel Vertical DMOS
鈥?/div>
Macro Model (Subcircuit Model)
鈥?/div>
Level 3 MOS
鈥?/div>
Apply for both Linear and Switching Application
鈥?/div>
Accurate over the
鈭?5
to 125擄C Temperature Range
鈥?/div>
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
鈭?5
to 125擄C
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72299
20-May-04
www.vishay.com
1

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