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Si7880DP

New Product

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

D

TrenchFETr Power MOSFET

D

PWM Optimized

D

New Low Thermal Resistance PowerPAKt Package with

Low 1.07-mm Profile

I

D

(A)

29

25

PRODUCT SUMMARY

V

DS

(V)

30

r

DS(on)

(W)

0.003 @ V

GS

= 10 V

0.00425 @ V

GS

= 4.5 V

APPLICATIONS

D

DC/DC Converters

鈥?Low-Side MOSFET in Synchronous Buck in Desktops

D

Secondary Synchronous Rectifier

PowerPAKt SO-8

D

6.15 mm

S

1

2

3

4

D

8

7

6

5

D

D

D

S

S

G

5.15 mm

G

S

N-Channel MOSFET

Bottom View

ABSOLUTE MAXIMUM RATINGS (T

A

= 25_C UNLESS OTHERWISE NOTED)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

J

= 150_C)

a

_

Pulsed Drain Current (10

ms

Pulse Width)

Continuous Source Current (Diode Conduction)

a

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

T

A

= 25_C

T

A

= 70_C

T

A

= 25_C

T

A

= 70_C

Symbol

V

DS

V

GS

10 secs

30

"20

29

Steady State

Unit

V

18

14

60

A

1.6

1.9

1.2

鈥?5 to 150

W

_C

I

D

I

DM

I

S

P

D

T

J

, T

stg

25

4.5

5.4

3.4

THERMAL RESISTANCE RATINGS

Parameter

t

v

10 sec

Maximum Junction-to-Ambient

a

Maximum Junction-to-Case (Drain)

Notes

a. Surface Mounted on 1鈥?x 1鈥?FR4 Board.

Document Number: 71875

S-20919鈥擱ev. A, 01-Jul-02

www.vishay.com

Steady State

Steady State

R

thJA

R

thJC

Symbol

Typical

18

50

1.0

Maximum

23

65

1.5

Unit

_C/W

C/W

1

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