Si3454ADV
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
4.5
3.8
r
DS(on)
(W)
0.060 @ V
GS
= 10 V
0.085 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
TSOP-6
Top View
(1, 2, 5, 6) D
1
3 mm
6
5
2
3
4
(3) G
2.85 mm
Ordering Information: Si3454ADV-T1
Si3454ADV-T1鈥擡3 (Lead Free)
Marking Code:
A4xxx
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
5 secs
30
"20
4.5
3.6
20
1.7
2.0
1.3
Steady State
Unit
V
3.4
2.7
A
1.0
1.14
0.73
鈭?5
to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1鈥?x 1鈥?FR4 Board.
Document Number: 71108
S-40424鈥擱ev. C, 15-Mar-04
www.vishay.com
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
50
90
30
Maximum
62.5
110
36
Unit
_C/W
C/W
1