6MBI10S-120
IGBT MODULE ( S series)
1200V / 10A 6 in one-package
Features
路 Compact package
路 P.C.board mount
路 Low V
CE
(sat)
IGBT Modules
Applications
路 Inverter for motor drive
路 AC and DC servo drive amplifier
路 Uninterruptible power supply
路 Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25擄C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous Tc=25擄C
current
1ms
Tc=80擄C
Tc=25擄C
Tc=80擄C
Symbol
V
CES
V
GES
I
C
I
C
pulse
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
is
Mounting *
1
Rating
1200
鹵20
15
10
30
20
10
20
75
Unit
V
V
A
A
A
A
W
Equivalent circuit
13 (P )
1(G u )
5(G v)
9(G w )
2(E u)
16 (U)
6(E v )
15 (V )
10 (E w )
14 (W )
1ms
Max. power dissipation (1 device)
Operating temperature
Storage temperature
Isolation voltage
Screw torque
3(G x)
7(G y)
11 (G z)
擄C
+150
擄C
-40 to +125
AC 2500 (1min.) V
N路m
3.5
4(E x )
17 (N)
8(E y )
12 (E z )
*
1 :
Recommendable value : 2.5 to 3.5 N路m (M5)
Electrical characteristics (Tj=25擄C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
t
r
t
r(i)
t
off
t
f
V
F
t
rr
Characteristics
Min.
鈥?/div>
鈥?/div>
5.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
7.2
2.3
2.8
1200
250
220
0.35
0.25
0.1
0.45
0.08
2.5
2.0
鈥?/div>
Max.
1.0
0.2
8.5
2.6
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.2
0.6
鈥?/div>
1.0
0.3
3.3
鈥?/div>
0.35
Conditions
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=鹵20V
V
CE
=20V, I
C
=10mA
Tj=25擄C V
GE
=15V, I
C
=10A
Tj=125擄C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=10A
V
GE
=鹵15V
R
G
=120ohm
Tj=25擄C
Tj=125擄C
I
F
=10A
I
F
=10A, V
GE
=0V
V
碌s
Unit
mA
碌A(chǔ)
V
V
pF
碌s
Turn-off time
Diode forward on voltage
Reverse recovery time
Thermal resistance characteristics
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*
2
Characteristics
Min.
Thermal resistance
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
0.05
Max.
1.67
2.78
鈥?/div>
IGBT
FWD
the base to cooling fin
擄C/W
擄C/W
擄C/W
Conditions
Unit
*
2
: This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI10S-120相關(guān)型號PDF文件下載
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下載
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英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
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