鈥?/div>
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Time
I
CES
I
GES
V
GE(th)
V
CE(sat)
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
C
ies
C
oes
C
res
t
ON
t
r,x
t
r,i
t
OFF
t
f
V
F
Test Conditions
V
GE
=0V V
CE
=1400V
V
CE
=0V V
GE
=鹵 20V
V
GE
=20V I
C
=100mA
V
GE
=15V I
C
=100A; T
j
= 25擄C
V
GE
=15V I
C
=100A; T
j
=125擄C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=800V
I
C
=100A
V
GE
=鹵 15V
R
G
=12鈩?/div>
Inductive Load
I
F
=100A; V
GE
=0V; T
j
= 25擄C
I
F
=100A; V
GE
=0V; T
j
=125擄C
I
F
=100A
Min.
Typ.
5.5
7.2
2.4
3.0
12000
2500
2200
0.35
0.25
0.10
0.45
0.08
2.6
2.2
Max.
1.0
200
8.5
2.7
Units
mA
nA
V
pF
1.2
0.6
1.0
0.3
3.4
350
碌s
V
ns
t
rr
鈥?/div>
Thermal Characteristics
Items
Thermal Resistance
Symbols
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
R
th(j-c)
R
th(j-c)
R
th(c-f)
Max.
0.18
0.36
Units
擄C/W
0.05
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