6MBI100S-120
IGBT MODULE ( S series)
1200V / 100A 6 in one-package
Features
路 Compact package
路 P.C.board mount
路 Low V
CE
(sat)
IGBT Modules
Applications
路 Inverter for motor drive
路 AC and DC servo drive amplifier
路 Uninterruptible power supply
路 Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25擄C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous Tc=25擄C
current
1ms
Tc=80擄C
Tc=25擄C
Tc=80擄C
Symbol
V
CES
V
GES
I
C
I
C
pulse
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
is
Mounting *
1
Rating
1200
鹵20
150
100
300
200
100
200
700
Unit
V
V
A
A
A
A
W
Equivalent Circuit Schematic
21(P)
13(P)
1(Gu)
5(Gv)
9(Gw)
2(Eu)
19(U)
6(Ev)
17(V)
10(Ew)
15(W)
1ms
Max. power dissipation (1 device)
Operating temperature
Storage temperature
Isolation voltage
Screw torque
3(Gx)
7(Gy)
11(Gz)
擄C
+150
擄C
-40 to +125
AC 2500 (1min.) V
N路m
3.5
4(Ex)
20(N)
8(Ey)
12(Ez)
14(N)
*
1 :
Recommendable value : 2.5 to 3.5 N路m (M5)
Electrical characteristics (Tj=25擄C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
t
r
t
r(i)
t
off
t
f
V
F
t
rr
Characteristics
Min.
鈥?/div>
鈥?/div>
5.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
7.2
2.3
2.8
12000
2500
2200
0.35
0.25
0.1
0.45
0.08
2.5
2.0
鈥?/div>
Max.
1.0
0.2
8.5
2.6
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.2
0.6
鈥?/div>
1.0
0.3
3.3
鈥?/div>
0.35
Conditions
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=鹵20V
V
CE
=20V, I
C
=100mA
Tj=25擄C V
GE
=15V, I
C
=100A
Tj=125擄C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=100A
V
GE
=鹵15V
R
G
=12鈩?/div>
Tj=25擄C
Tj=125擄C
I
F
=100A
I
F
=100A, V
GE
=0V
V
碌s
Unit
mA
碌A(chǔ)
V
V
pF
碌s
Turn-off time
Diode forward on voltage
Reverse recovery time
Thermal resistance characteristics
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*
2
Characteristics
Min.
Thermal resistance
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
0.05
Max.
0.18
0.36
鈥?/div>
IGBT
FWD
the base to cooling fin
擄C/W
擄C/W
擄C/W
Conditions
Unit
*
2
: This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI100S-120相關(guān)型號(hào)PDF文件下載
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英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CE...
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