6AM13
Silicon N-Channel/P-Channel Complementary Power MOS FET
Array
ADE-208-1217 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
鈥?/div>
Low on-resistance
N-channel: R
DS(on)
鈮?/div>
0.075 , V
GS
= 10 V, I
D
= 5 A
P-channel: R
DS(on)
鈮?/div>
0.12 , V
GS
= 鈥?0 V, I
D
= 鈥? A
鈥?/div>
Capable of 4 V gate drive
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low drive current
High speed switching
High density mounting
Suitable for H-bridged motor driver
next
6AM13相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
ETC
-
英文版
hitachi
-
英文版
hitachi
-
英文版
ETC
-
英文版
hitachi
-
英文版
Silicon N-Channel/P-Channel Complementary Power MOS FET Arra...
HITACHI
-
英文版
Silicon N-Channel/P-Channel Complementary Power MOS FET Arra...
HITACHI [H...
-
英文版
Silicon N-Channel/P-Channel Power MOS FET Array
HITACHI
-
英文版
Silicon N-Channel/P-Channel Power MOS FET Array
HITACHI [H...
-
英文版
Silicon N/P Channel MOS FET High Speed Power Switching
HITACHI
-
英文版
Silicon N/P Channel MOS FET High Speed Power Switching
HITACHI [H...