Numonyx鈩?Wireless Flash Memory
(W18/W30 SCSP)
32WQ and 64WQ Family with Asynchronous RAM
Datasheet
Product Features
Device Architecture
鈥?Flash Density: 32-Mbit, 64-Mbit
鈥?Async PSRAM Density: 16-Mbit, 32-Mbit
鈥?Top, Bottom or Dual flash parameter
configuration
Device Voltage
鈥?Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V
鈥?RAM VCC = 1.8 V or 3.0 V
Device Packaging
鈥?88 balls (8 x 10 active ball matrix)
鈥?Area: 8x10 mm
鈥?Height: 1.2 mm to 1.4 mm
PSRAM Performance
鈥?70 ns initial access, 25 ns async page reads at
1.8 V I/O
鈥?70 ns initial access async PSRAM at 1.8 V
I/O
鈥?70 ns initial access, 25 ns async page
reads at 3.0 V I/O
SRAM Performance
鈥?70 ns initial access at 1.8 V or 3.0 V I/O
Quality and Reliability
鈥?Extended Temperature: 鈥?5 擄C to +85 擄C
鈥?Minimum 100K flash block erase cycle
鈥?90 nm ETOX鈩?IX flash technology
鈥?130 nm ETOX鈩?VIII flash technology
Flash Performance
鈥?65 ns initial access at 1.8 V I/O
鈥?70 ns initial access at 3.0 V I/O
鈥?25 ns async page at 1.8 V or 3.0 V I/O
鈥?14 ns sync reads (t
CHQV
) at 1.8 V I/O
鈥?20 ns sync reads (t
CHQV
) at 3.0 V I/O
鈥?Enhanced Factory Programming:
3.10 碌s/Word (Typ)
Flash Architecture
鈥?Read-While-Write/Erase
鈥?Asymmetrical blocking structure
鈥?4-KWord parameter blocks (Top or
Bottom)
鈥?32-KWord main blocks
鈥?4-Mbit partition size
鈥?128-bit One-Time Programmable
(OTP) Protection Register
鈥?Zero-latency block locking
鈥?Absolute write protection with block
lock using F-VPP and F-WP#
Flash Software
鈥?Numonyx鈩?Flash Data Integrator
(FDI) and Common Flash Interface
(CFI)
Order Number: 251407-13
November 2007