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Phase Control Thyristor
5STP 03X6500
Doc. No. 5SYA1003-04 Sep. 01
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Part Number
V
DSM
V
DRM
V
RSM1
I
DSM
I
RSM
dV/dt
crit
V
RSM
V
RRM
5STP 03X6500 5STP 03X6200 5STP 03X5800
Conditions
6500 V
5600 V
7000 V
6200 V
5300 V
6700 V
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150 mA
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150 mA
1000 V/碌s
5800 V
4900 V
6300 V
f = 5 Hz, t
p
= 10ms
f = 50 Hz, t
p
= 10ms
t
p
= 5ms, single pulse
V
DSM
V
RSM
T
j
= 125擄C
Exp. to 0.67 x V
DRM
, T
j
= 125擄C
V
DRM
/ V
RRM
are equal to V
DSM
/ V
RSM
values up to T
j
= 110擄C
Mechanical data
F
M
Mounting force
nom.
min.
max.
a
Acceleration
Device unclamped
Device clamped
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
50 m/s
2
100 m/s
2
0.4 kg
38 mm
21 mm
10 kN
8 kN
12 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
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