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5LN01SP Datasheet

  • 5LN01SP

  • Ultrahigh-Speed Switching Applications

  • 4頁

  • SANYO

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上傳產品規(guī)格書

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Ordering number : ENN6559
5LN01SP
N-Channel Silicon MOSFET
5LN01SP
Ultrahigh-Speed Switching Applications
Features
鈥?/div>
鈥?/div>
鈥?/div>
Package Dimensions
unit : mm
2180
[5LN01SP]
4.0
3.0
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
2.2
0.4
0.5
0.6
1.8
15.0
0.4
0.4
1 2
1.3
0.7
3
1.3
0.7
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW鈮?0碌s, duty cycle鈮?%
Conditions
1 : Source
2 : Drain
3 : Gate
SANYO : SPA
Ratings
50
鹵10
0.1
0.4
0.25
150
--55 to +150
Unit
V
V
A
A
W
擄C
擄C
3.0
3.8nom
Electrical Characteristics
at Ta=25擄C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
錚?/div>
yfs
錚?/div>
Conditions
ID=1mA, VGS=0
VDS=50V, VGS=0
VGS=鹵8V, VDS=0
VDS=10V, ID=100碌A
VDS=10V, ID=50mA
Ratings
min
50
10
鹵10
0.4
0.13
0.18
1.3
typ
max
Unit
V
碌A
碌A
V
S
Marking : YB
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82200 TS IM TA-2046 No.6559-1/4

5LN01SP 產品屬性

  • 0現(xiàn)貨

  • 停產

  • -

  • 袋

  • 停產

  • N 通道

  • MOSFET（金屬氧化物）

  • 50 V

  • 100mA（Ta）

  • 1.5V，4V

  • 7.8 歐姆 @ 50mA，4V

  • 1.3V @ 100μA

  • 1.57 nC @ 10 V

  • ±10V

  • 6.6 pF @ 10 V

  • -

  • 250mW（Ta）

  • 150°C（TJ）

  • 通孔

  • 3-SPA

  • SC-72

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