5962F9689104VYA Datasheet

IC型號：
5962F9689104VYA
PDF描述：
Radiation-Hardened 32K x 8 PROM
文件大小：
71.29KB
PDF頁數(shù)：
11頁
芯片廠家：
AEROFLEX

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Standard Products

UT28F256 Radiation-Hardened 32K x 8 PROM

Data Sheet

December 2002

FEATURES

Programmable, read-only, asynchronous, radiation-

hardened, 32K x 8 memory

- Supported by industry standard programmer

45ns and 40ns maximum address access time (-55

C to

+125

TTL compatible input and TTL/CMOS compatible output

levels

Three-state data bus

Low operating and standby current

- Operating: 125mA maximum @25MHz

鈥?/div>

Derating: 3mA/MHz

- Standby: 2mA maximum (post-rad)

Radiation-hardened process and design; total dose

irradiation testing to MIL-STD-883, Method 1019

Total dose: 1E6 rad(Si)

LET

(0.25) ~ 100 MeV-cm

/mg

SEL Immune >128 MeV-cm

/mg

- Saturated Cross Section cm

per bit, 1.0E-11

- 1.2E-8 errors/device-day, Adams 90% geosynchronous

heavy ion

Memory cell LET threshold: >128 MeV-cm

/mg

QML Q & V compliant part

- AC and DC testing at factory

Packaging options:

- 28-lead 50-mil center flatpack (0.490 x 0.74)

- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory

: 5.0 volts

10%

Standard Microcircuit Drawing 5962-96891

PRODUCT DESCRIPTION

The UT28F256 amorphous silicon anti-fuse PROM is a high

performance, asynchronous, radiation-hardened,

32K x 8 programmable memory device. The UT28F256 PROM

features fully asychronous operation requiring no external clocks

or timing strobes. An advanced radiation-hardened twin-well

CMOS process technology is used to implement the UT28F256.

The combination of radiation-hardness, fast access time, and low

power consumption make the UT28F256 ideal for high speed

systems designed for operation in radiation environments.

A(14:0)

DECODER

MEMORY

ARRAY

SENSE AMPLIFIER

PROGRAMMING

CONTROL

LOGIC

DQ(7:0)

Figure 1. PROM Block Diagram

型號

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描述

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5962F9689104VYA Datasheet

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