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5962-9088101M2A Datasheet

  • 5962-9088101M2A

  • EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFI...

  • 79頁

  • TI

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TLE202x, TLE202xA, TLE202xB, TLE202xY
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION
OPERATIONAL AMPLIFIERS
SLOS191B 鈥?FEBRUARY 1997 鈥?REVISED JANUARY 2002
D
D
D
D
D
D
Supply Current . . . 300
碌A(chǔ)
Max
High Unity-Gain Bandwidth . . . 2 MHz Typ
High Slew Rate . . . 0.45 V/碌s Min
Supply-Current Change Over Military Temp
Range . . . 10
碌A(chǔ)
Typ at V
CC
鹵
=
鹵
15 V
Specified for Both 5-V Single-Supply and
鹵15-V
Operation
Phase-Reversal Protection
D
D
D
D
D
High Open-Loop Gain . . . 6.5 V/碌V
(136 dB) Typ
Low Offset Voltage . . . 100
碌V
Max
Offset Voltage Drift With Time
0.005
碌V/mo
Typ
Low Input Bias Current . . . 50 nA Max
Low Noise Voltage . . . 19 nV/鈭欻z Typ
description
The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers
using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with
highly improved slew rate and unity-gain bandwidth.
The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic
improvement in unity-gain bandwidth and slew rate over similar devices.
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both
time and temperature. This means that a precision device remains a precision device even with changes in
temperature and over years of use.
This combination of excellent dc performance with a common-mode input voltage range that includes the
negative rail makes these devices the ideal choice for low-level signal conditioning applications in either
single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry
that eliminates an unexpected change in output states when one of the inputs goes below the negative supply
rail.
A variety of available options includes small-outline and chip-carrier versions for high-density systems
applications.
The C-suffix devices are characterized for operation from 0擄C to 70擄C. The I-suffix devices are characterized
for operation from 鈥?40擄C to 85擄C. The M-suffix devices are characterized for operation over the full military
temperature range of 鈥?55擄C to 125擄C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
錚?/div>
2002, Texas Instruments Incorporated
POST OFFICE BOX 655303
鈥?/div>
DALLAS, TEXAS 75265
1

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