AlGaAs/GaAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-554A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
7.62
(.300)
5.90
(.230)
MIE-554A4
Package Dimensions
Unit:mm( inch)
蠁5.05
(.200)
5.47
(.215)
SEE NOTE 2
1.0
(.040)
FLAT DENOTES CATHODE
Features
23.4 MIN. (.920)
l
High radiant power and high radiant intesity
Suitable for DC and high pulse current operation
Standard T-1 3/4 (
蠁5mm)
package
Peak wavelength
位
P
=940 nm
Good spectral matching to si-photodetecto
2.54NOM.
(.100)
SEE NOTE 3
1.0MIN.
(.040)
0.5 TYP.
(.020)
l
l
l
l
l
Radiant angle : 50擄
A
C
Notes :
1. Tolerance is 鹵 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10碌s pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55 C to +100 C
-55
o
C to +100
o
C
260
o
C for 5 seconds
o
o
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
11/17/2000
1
2
