3mm
Silicon PNP
Photo Transistor
1.57
[.062]
4.32
[.170]
3.00
[.118]
DIA.
5.08
[.200]
3.67
[.149]
DIA.
CATHODE
6.41
[.253]
3.68
[.145]
TYP
Dialight
551-7610
Features
6.35
[.250]
7.11
.280
鈥?Silicon PNP type transistor
鈥?Narrow acceptance angle
鈥?Daylight filtered
鈥?Good linearity
鈥?High reliability
ABSOLUTE MAXIMUM RATINGS
(T
A
=25擄C)
Operating and Storage
Temperature Range (擄C)
Soldering Temperature
(鈮?mm from case bottom)
Dip Soldering Time (T
S
) t鈮? s
Iron Soldering Time (T
S
) t鈮? s
Collector Emitter Voltage (V
CEO
)
Collector Current (I
C
)
Collector Peak Current (I
PK
) t<10碌s
Power Dissipation (P
TOT
) T
A
=25擄C
Thermal Resistence (R
THJA
)
260擄C
300擄C
35V
15 mA
75 mA
165 mW
450kW
-55/+100
2.54
[.100]
.50
[.020]
TYP
10.86
[.428]
13.30
[.525]
MAX
脴 1.10
[.043]
TYP.
2.54
[.100]
RECOMMENDED
PC BOARD HOLE PATTERN
Dimensions in mm [inches]
4
OPERATING CHARACTERISTICS
(T
A
=25擄C)
Parameter
Maximum Sensitivity Wavelength
Spectral Range, Photosensitivity
Radiant Sensitive Area
Distance, Chip Surface and Lens
Full Angle
Capacitance
(V
CE
=0 V, f=1 MHz, E=0 lux)
Leakage Current (V
CE
=25 V, E=0 lx)
Photocurrent, Collector-
Emitter
(1)
(Ee=0.5 mW/cm
2
,
V
CE
=5 V,
位=950
nm)
Rise/Fall Time (I
C
=1 mA,
V
CC
=5 V, R
L
=1k鈩?
Collector Emitter
Saturation Voltage
(I
C
=I
PCEmin
(1)
鈥?0.3,
位=950
nm
Ee=0.5 mW/cm2)
Notes: (1) IPCEmin = minimum photocurrent
Solder Adherance per MIL-STD-202E, Method 208C
Symbol
位
Smax
位
A
H
2胃
1
/
2
C
CE
I
ce0
Value
900
730 min, 1120 max
.045 typ
2.4 typ, 2.8 max
24擄
5
1 typ, 200 max
Unit
nm
nm
mm
2
mm
Deg.
pF
nA
I
PCE
t
R
,t
F
.63 min, 1.5 typ
6.5 typ
mA
碌s
V
CEsat
200
mV
Dialight Corporation 鈥?1913 Atlantic Avenue 鈥?Manasquan, NJ 08736 鈥?TEL: (732) 223-9400 鈥?FAX: (732) 223-8788 鈥?www.dialight.com
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