SN54LVTH245A, SN74LVTH245A
3.3-V ABT OCTAL BUS TRANSCEIVERS
WITH 3-STATE OUTPUTS
SCBS130P 鈥?MAY 1992 鈥?REVISED APRIL 1999
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description
These octal bus transceivers are designed specifically for low-voltage (3.3-V) V
CC
operation, but with the
capability to provide a TTL interface to a 5-V system environment.
These devices are designed for asynchronous communication between data buses. They transmit data from
the A bus to the B bus or from the B bus to the A bus, depending on the logic level at the direction-control (DIR)
input. The output-enable (OE) input can be used to disable the devices so the buses are effectively isolated.
Active bus-hold circuitry is provided to hold unused or floating data inputs at a valid logic level.
When V
CC
is between 0 and 1.5 V, the devices are in the high-impedance state during power up or power down.
However, to ensure the high-impedance state above 1.5 V, OE should be tied to V
CC
through a pullup resistor;
the minimum value of the resistor is determined by the current-sinking capability of the driver.
These devices are fully specified for hot-insertion applications using I
off
and power-up 3-state. The I
off
circuitry
disables the outputs, preventing damaging current backflow through the devices when they are powered down.
The power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down,
which prevents driver conflict.
The SN54LVTH245A is characterized for operation over the full military temperature range of 鈥?5擄C to 125擄C.
The SN74LVTH245A is characterized for operation from 鈥?0擄C to 85擄C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
漏
1999, Texas Instruments Incorporated
On products compliant to MIL-PRF-38535, all parameters are tested
unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.
POST OFFICE BOX 655303
鈥?/div>
DALLAS, TEXAS 75265
A8
GND
B8
B7
B6
State-of-the-Art Advanced BiCMOS
Technology (ABT) Design for 3.3-V
Operation and Low Static-Power
Dissipation
Support Mixed-Mode Signal Operation (5-V
Input and Output Voltages With 3.3-V V
CC
)
Support Unregulated Battery Operation
Down to 2.7 V
Typical V
OLP
(Output Ground Bounce)
< 0.8 V at V
CC
= 3.3 V, T
A
= 25擄C
I
off
and Power-Up 3-State Support Hot
Insertion
Bus Hold on Data Inputs Eliminates the
Need for External Pullup/Pulldown
Resistors
Latch-Up Performance Exceeds 500 mA Per
JESD 17
ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
Package Options Include Plastic
Small-Outline (DW), Shrink Small-Outline
(DB), and Thin Shrink Small-Outline (PW)
Packages, Ceramic Chip Carriers (FK),
Ceramic Flat (W) Packages, and Ceramic
(J) DIPs
SN54LVTH245A . . . J OR W PACKAGE
SN74LVTH245A . . . DB, DW, OR PW PACKAGE
(TOP VIEW)
DIR
A1
A2
A3
A4
A5
A6
A7
A8
GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
CC
OE
B1
B2
B3
B4
B5
B6
B7
B8
SN54LVTH245A . . . FK PACKAGE
(TOP VIEW)
A2
A1
DIR
V
CC
A3
A4
A5
A6
A7
4
5
6
7
8
3 2 1 20 19
18
17
16
15
14
9 10 11 12 13
OE
B1
B2
B3
B4
B5
1
1
2
3
4
5
6
7
