GaAlAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-534H4 is a GaAlAs infrared LED having a
peak wavelength at 850nm. It features ultra-high power,
high response speed and molded package with higher
radiant intensity. In addition to improving the S/N ratio
in applied optical systems, the MIE-534H4 has greatly
improved long-distance characteristics as well as sign-
ificantly increased its range of applicability .
SEE NOTE 2
1.00
(.040)
7.62
(.300)
蠁5.05
(.200)
MIE-534H4
Unit: mm (inches)
Package Dimensions
5.47
(.215)
5.90
(.230)
FLAT DENOTES CATHODE
Features
l
Ultra-High radiant intensity
High response speed
Standard T-1 3/4 (
蠁5mm)
package
Peak wavelength
位
P
=850 nm
Radiant angle : 30擄
0.50 TYP.
(.020)
23.40 MIN
(.920)
l
l
l
l
1.00MIN.
(.040)
2.54NOM.
(.100)
SEE NOTE 3
A
C
Application
l
Data communication
SIR
Notes :
1. Tolerance is 鹵 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
l
Absolute Maximum Ratings
'@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10碌s pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55 C to +100 C
o
o
-55 C to +100 C
o
o
Unit
mW
A
mA
V
260
o
C for 5 seconds
Unity Opto Technology Co., Ltd.
11/17/2000
1
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