AlGaAs/GaAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-516A2U is infrared emitting diodes in
GaAs technology with AlGaAs window coating
molded in pastel pink transparent package.
MIE-516A2U
Package Dimensions
蠁5.05
(.200)
Unite: mm ( inches )
5.47
(.215)
7.62
(.300)
5.90
(.230)
Features
l
l
l
l
l
High radiant power and high radiant intensity
Standard T-1 3/4 (
蠁
5mm) package
Peak wavelength
位
p
= 940 nm
Good spectral matching to si-photodetector
Radiant angle : 16擄
1.00
(.040)
FLAT DENOTES CATHODE
23.4 0MIN.
(.920)
0.50 TYP.
(.020)
1.00MIN
(.040)
2.54
(.100)
A
C
Notes :
1. Tolerance is 鹵 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10碌s pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
11/17/2000
1
2
