GaAlAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-514L3 is an infrared emitting diode in GaAlAs
on GaAlAs technology molded in water clear plastic
package .
7.62
(.300)
MIE-514L3
Package Dimensions
蠁5.05
(.200)
Unite: mm ( inches )
5.47
(.215)
5.90
(.230)
Features
l
1.00
(.040)
SEE NOTE 2
FLAT DENOTES CATHODE
Suitable for DC and high pulse current operation
Standard T-1 3/4 (
蠁
5mm ) package
Peak wavelength
位
p
= 880 nm
Good spectral matching to si-photodetector
Radiation angle : 16擄
2.54NOM.
(.100)
SEE NOTE 3
1.00MIN.
(.040)
0.50 TYP.
(.020)
23.40 MIN
(.920)
l
l
l
l
A
C
NOTES :
1. Tolerance is 鹵 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
'@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10碌s pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
o
260 C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
11/17/2000
1
2
