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50N02-09 Datasheet

  • 50N02-09

  • N-Channel 20-V (D-S) 175 Degree Celcious MOSFET

  • 53.03KB

  • 4頁

  • VISHAY   VISHAY

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SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
20
r
DS(on)
(W)
0.0095 @ V
GS
= 10 V
0.017 @ V
GS
= 4.5 V
I
D
(A)
a
20
15
D
D
D
D
TrenchFETr Power MOSFET
175_C Junction Temperature
PWM Optimized for High Efficiency
100% R
g
Tested
APPLICATIONS
D
High-Side Synchronous Buck DC/DC
Conversion
鈭?/div>
Desktop
鈭?/div>
Server
D
TO-252
Drain Connected to Tab
G
D
S
G
Top View
S
N-Channel MOSFET
Ordering Information: SUD50N02-09P
SUD50N02-09P鈥擡3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0 1 mH
0.1
T
A
= 25_C
T
C
= 25_C
T
A
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
20
"20
20
14
100
4.3
29
42
6.5
a
39.5
鈭?5
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Limited by package
Document Number: 72034
S-41168鈥擱ev. C, 14-Jun-04
www.vishay.com
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
19
40
3.1
Maximum
23
50
3.8
Unit
_C/W
C/W
1

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