鈥?/div>
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=175m鈩?[IC=0.5A, IB=50mA].
Ultrasmall package facilitates miniaturization in end
products.
Small ON-resistance (Ron).
0.4
0.5
0.6
1.8
0.4
1 2
1.3
0.7
3
1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
Ratings
60
50
5
500
1.0
400
150
--55 to +150
Unit
V
V
V
mA
A
mW
擄C
擄C
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
3.0
3.8nom
Electrical Characteristics
at Ta=25擄C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=10mA
VCE=10V, IC=50mA
300
500
Conditions
Ratings
min
typ
max
100
100
800
MHz
Unit
nA
nA
Marking : YN
0.7
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52703 TS IM TA-100121 No.7518-1/4
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