Hermetic PIN Diodes for
Stripline/Microstrip Switches/
Attenuators
Technical Data
5082-3140
5082-3141
Features
鈥?Broadband Operation
HF through X-Band
鈥?Low Insertion Loss
Less than 0.5 dB to 10 GHz
(5082-3140)
鈥?High Isolation
Greater than 20 dB to 10 GHz
(5082-3140)
鈥?Fast Switching/Modulation
5 ns Typical (5082-3141)
鈥?Low Drive Current
Required
Less than 20 mA for 20 dB
Isolation (5082-3141)
Outline 60
2.16 (0.085) 2.03 TYP.
CHIP LOCATION
1.91 (0.075)
(0.080)
2.54
(0.100)
DIA.
2.34
(0.092)
(2 PLACES)
6.65 (0.262)
0.64 TYP. 6.15 (0.242)
(0.025)
3.05 MIN.
(0.120)
0.13 TYP.
(0.005)
10.67 (0.420)
10.16 (0.400)
5.46 (0.215)
4.95 (0.195)
1.52 TYP.
(0.060)
3.18 (0.125)
2.95 (0.115)
4.19 (0.165)
3.94 (0.155)
DIMENSIONS IN MILLIMETERS AND (INCHES)
Description/Applications
The HP 5082-3140 is a passivated
planar device and the 5082-3141 is
a passivated mesa device. Both
are in a shunt configuration in
hermetic stripline packages.
These diodes are optimized for
good continuity of characteristic
impedance which allows a
continuous transition when used
in 50
鈩?/div>
microstrip or stripline
circuits.
These diodes are designed for
applications in microwave and
HF-UHF systems using stripline
or microstrip transmission line
techniques.
Maximum Ratings
Part No. 5082-
Junction Operating and Storage
Temperature Range
Power Dissipation
[1]
Peak Incident Pulse Power
[2]
Peak Inverse Voltage
Soldering Temperature
-3140
-3141
-65擄C to
-65擄C to
+150擄C
+150擄C
1.75 W
0.75 W
225 W
50 W
150 V
70 V
230擄C for 5 sec.
Notes:
1. Device properly mounted in sufficient heat sink at 25擄C, derate linearly to
zero at maximum operating temperature.
2. t
p
= 1
碌s,
f = 10 GHz, Du = 0.001, Z
O
= 50
鈩?
T
A
= 25擄C.
2-97
5965-8882E
1
2
3
4
