鈥?/div>
Small Size
Eases Broad Band Designs
鈥?Tight Match
Improves Mixer Balance
鈥?Improved Balance over
Temperature
鈥?Rugged Design
Outline E4
C
P
= 0.07 pF diagonal
C
P
= 0.09 pF adjacent
0.56 (0.022)
0.46 (0.018)
2.79 (0.110)
2.29 (0.090)
Description/Applications
This matched diode quad uses a
monolithic array of Schottky
diodes interconnected in ring
configuration. The relative
proximity of the diode junction on
the wafer assures uniform
electrical characteristics and
temperature tracking.
These diodes are designed for use
in double balanced mixers, phase
detectors, AM modulators, and
pulse modulators requiring
wideband operation and small
size. the low barrier diodes allow
for optimum mixer noise figure at
lower than conventional local
oscillator levels. the wider
dynamic range of the medium
barrier diodes allows for better
distortion performance.
Note:
For new designs, the
HSMS-820X series of surface mount
microwave diodes are recommended.
4.06 (0.160)
3.56 (0.140)
1.27 (0.05) MAX.
0.64 (0.025) MAX.
0.15 (0.006)
0.10 (0.004)
DIMENSIONS IN MILLIMETERS AND (INCHES).
Maximum Ratings
Operating and Storage Temperature Range
E4 ............................................................................. -65擄C to +125擄C
DC Power Dissipation ............................................... 75 mW per Juction
Derated linearly to zero at maximum rated temperatures
(measured in infinite heat sink at T
CASE
= 25
擄
C).
Soldering Temperature
E4 ............................................................................. 220擄C for 10 sec
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
5965-8848E
3-62
1
2
