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4N32 Datasheet

  • 4N32

  • STANDARD THRU HOLE CASE 730A-04

  • 6頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 4N29/D
GlobalOptoisolator鈩?/div>
6-Pin DIP Optoisolators
Darlington Output
The 4N29/A, 4N30, 4N31, 4N32
(1)
and 4N33
(1)
devices consist of a gallium
arsenide infrared emitting diode optically coupled to a monolithic silicon
photodarlington detector.
This series is designed for use in applications requiring high collector output
currents at lower input currents.
鈥?/div>
Higher Sensitivity to Low Input Drive Current
鈥?/div>
Meets or Exceeds All JEDEC Registered Specifications
鈥?/div>
To order devices that are tested and marked per VDE 0884 requirements, the
suffix 鈥淰鈥?must be included at end of part number. VDE 0884 is a test option.
Applications
鈥?/div>
Low Power Logic Circuits
鈥?/div>
Interfacing and coupling systems of different potentials and impedances
鈥?/div>
Telecommunications Equipment
鈥?/div>
Portable Electronics
鈥?/div>
Solid State Relays
MAXIMUM RATINGS
(TA = 25擄C unless otherwise noted)
Rating
INPUT LED
Reverse Voltage
Forward Current 鈥?Continuous
LED Power Dissipation @ TA = 25擄C
Derate above 25擄C
OUTPUT DETECTOR
Collector鈥揈mitter Voltage
Emitter鈥揅ollector Voltage
Collector鈥揃ase Voltage
Collector Current 鈥?Continuous
Detector Power Dissipation @ TA = 25擄C
Derate above 25擄C
TOTAL DEVICE
Isolation Surge Voltage(2)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25擄C
Derate above 25擄C
Ambient Operating Temperature Range(3)
Storage Temperature Range(3)
Soldering Temperature (10 sec, 1/16鈥?from case)
VISO
PD
TA
Tstg
TL
7500
250
2.94
鈥?55 to +100
鈥?55 to +150
260
Vac(pk)
mW
mW/擄C
擄C
擄C
擄C
VCEO
VECO
VCBO
IC
PD
30
5
30
150
150
1.76
Volts
Volts
Volts
mA
mW
mW/擄C
VR
IF
PD
3
60
120
1.41
Volts
mA
mW
mW/擄C
Symbol
Value
Unit
4N29
4N29A
4N30 *
4N31
4N32 *
4N33 *
[CTR = 100% Min]
[CTR = 50% Min]
[CTR = 500% Min]
*Motorola Preferred Devices
STYLE 1 PLASTIC
6
1
STANDARD THRU HOLE
CASE 730A鈥?4
SCHEMATIC
1
2
3
PIN 1.
2.
3.
4.
5.
6.
LED ANODE
LED CATHODE
N.C.
EMITTER
COLLECTOR
BASE
6
5
4
1. Difference in 4N32 and 4N33 is JEDEC Registration for VISO only. All Motorola 6鈥揚in devices
exceed JEDEC specification and are 7500 Vac(pk). The same applies for 4N29 and 4N30.
2. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and
2 are common, and Pins 4, 5 and 6 are common.
3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred
devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 4
Motorola Optoelectronics Device Data
漏
Motorola, Inc. 1995
1

4N32 產(chǎn)品屬性

  • 2,000

  • 隔離器

  • 光隔離器 - 晶體管，光電輸出

  • -

  • 1

  • DC

  • 5300Vrms

  • 500% @ 10mA

  • -

  • 30V

  • 100mA

  • 60mA

  • 1V

  • 有基極的達林頓晶體管

  • 通孔

  • 6-DIP（0.300"，7.62mm）

  • 管件

  • 4N32GI4N32GI-ND4N32VS

4N32相關(guān)型號PDF文件下載

  • 型號
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    PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
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  • 英文版
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    MOTOROLA
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