鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature
Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting TJ = 25擄C
(VDD = 75 Vdc, VGS = 10 Vdc, Peak
IL = 40 Apk, L = 1.0 mH, RG = 25
W)
Thermal Resistance
鈥?Junction to Case
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10
seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
Value
100
100
鹵20
鹵40
40
29
140
169
1.35
鈥?5 to
150
800
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/擄C
擄C
mJ
2
Drain
擄C/W
R
胃JC
R
胃JA
TL
0.74
62.5
260
擄C
MTP40N10E
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
1
2
TO鈥?20AB
CASE 221A
STYLE 5
4
S
http://onsemi.com
40 AMPERES
100 VOLTS
RDS(on) = 40 m鈩?/div>
N鈥揅hannel
D
G
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTP40N10E
LLYWW
3
Source
3
1
Gate
ORDERING INFORMATION
Device
MTP40N10E
Package
TO鈥?20AB
Shipping
50 Units/Rail
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2000
1
November, 2000 鈥?Rev. 2
Publication Order Number:
MTP40N10E/D
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