PDF預(yù)覽

• 1
• 2
• 3
• 4
• 5
• 6
• 7
• 8
• 9
• 10
• 11
• 12
• 13
• 14
• 15
• 16
• 17
• 18
• 19
• 20
• 21
• 22

HMC453QS16G

/

453QS16GE

v01.0205

InGaP HBT 1.6 WATT POWER

AMPLIFIER, 0.4 - 2.2 GHz

Features

Output IP3: +51 dBm

21.5 dB Gain @ 400 MHz

8 dB Gain @ 2100 MHz

45% PAE @ +32 dBm Pout

+25 dBm CDMA2000 Channel Power@ -45 dBc ACP

Single +5V Supply

Integrated Power Control (VPD)

QSOP16G SMT Package: 29.4 mm

2

5

AMPLIFIERS - SMT

Typical Applications

The HMC453QS16G / HMC453QS16GE is ideal for

applications requiring a high dynamic range amplifier:

鈥?GSM, GPRS & EDGE

鈥?CDMA & W-CDMA

鈥?CATV/Cable Modem

鈥?Fixed Wireless & WLL

Functional Diagram

General Description

The HMC453QS16G & HMC453QS16GE are high

dynamic range GaAs InGaP Heterojunction Bipolar

Transistor (HBT) 1.6 watt MMIC power amplifiers

operating between 0.4 and 2.2 GHz. Packaged

in a miniature 16 lead QSOP plastic package, the

amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB

at 2.1 GHz. Utilizing a minimum number of external

components and a single +5V supply, the amplifier

output IP3 can be optimized to +47 dBm at 0.4 GHz

or +51 dBm at 2.1 GHz. The power control (VPD)

can be used for full power down or RF output power/

current control. The high output IP3 and PAE make

the HMC453QS16G & HMC453QS16GE ideal power

amplifiers for Cellular/PCS/3G, WLL, ISM and Fixed

Wireless applications.

Electrical Specifications,

T

A

= +25擄C, Vs= +5V, VPD = +5V

[1]

Parameter

Frequency Range

Gain

Gain Variation Over

Temperature

Input Return Loss

Output Return Loss

Output Power for 1dB

Compression (P1dB)

Saturated Output

Power (Psat)

Output Third Order

Intercept (IP3) [2]

Noise Figure

Supply Current (Icq)

Control Current (IPD)

44

29

19

Min.

Typ.

400 - 410

21.5

0.012

12

10

32

32.25

47

7

725

12

47

29

0.02

18

Max.

Min.

Typ.

450 - 496

20.5

0.012

15

10

32

32.25

50

8.5

725

12

46

29

0.02

12

Max.

Min.

Typ.

810 - 960

15

0.012

12

15

32

32.5

49

7

725

12

44

28.5

0.02

6

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

MHz

dB

0.02

dB /

擄C

dB

dB

dBm

dBm

dBm

dB

mA

mA

1710 - 1990

9

0.012

10

13

31.5

32

50

7.5

725

12

48

30

0.02

6

2010 - 2170

8

0.012

15

18

33

33.5

51

6.5

725

12

[1] Specifications and data reflect HMC453QS16G measured using the respective application circuits for each designated frequency band found

herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.

[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.

5 - 296

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

next

453QS16GE相關(guān)型號(hào)PDF文件下載

• 型號(hào)
  版本
  描述
  廠商
  下載
• 453QS16GE
  英文版
  InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
  HITTITE
  453QS16GE

您可能感興趣的PDF文件資料

• 453QS16GE

熱門(mén)IC型號(hào)推薦

• 40CPQ045
• 4N37
• 4N35M
• 4N36
• 40CPQ060
• 40L15CW
• 40CPQ100
• 4N25M
• 40CPQ100PBF
• 4N28M
• 4N30
• 4N28