GaAlAs HIGH POWER T0-46 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-404L3 is an infrared emitting diode with
GaAlAs / GaAlAs die technology molded in a water
clear plastic package.
5.60
(.221)
蠄4.75
(.187)
MIE-404L3
Unit : mm (inches )
45擄
CATHODE
INDICATOR
Package Dimensions
.70
(.028)
5.46
(.215)
.25 MAX
(.059 )
Features
l
l
l
l
25.00 MIN
(.984)
.50 TYP.
(.020)
Standard TO-46 package
Peak wavelength
位
p
= 880 nm
Good spectral matching to si-photodetector
Radiant angle : 25擄
A
C
2.54
(.100)
1.00 MIN
(.040)
Notes :
1. Tolerance is 鹵 .010" unless otherwise noted.
2. Protruded resin under flange is .031"max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10碌s pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
02/04/2002
1
2
