Feature of the device錛?/div>
High radiant power and high radiant intensity
Good spectral matching to si-photodetector
l
Wavelength錛?40
nm
l
Technology錛欸aAlAs/GaAs
Applications
l
IR remote control
l
Sensor technology
l
Discrete interrupter
Absolute Maximum Tatings
Parameter
Power Dissipation
Peak Forward Current (300pps, 10碌s pulse)
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
Unit
mW
A
mA
V
o
o
-55 C to +100 C
-55
o
C to +100
o
C
260
o
C for 5 seconds
NOTES :
1. Tolerance is 鹵 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 0.79 mm (.031'') max.
3. Lead spacing is measured where the leads emerge from the package.
Optical -Electrical Characteristics
Parameter
Radiant Intensity
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth
View Angle
Test Conditions
I
F
=20mA
I
F
=50mA
V
R
=5V
I
F
=20mA
I
F
=20mA
I
F
=20mA
404A4
414A4
404A4
414A4
Symbol
Ie
V
F
I
R
位p
鈭單?/div>
2胃
1/2
Min.
-
-
-
-
-
-
-
-
Typ.
3.0
2.1
1.3
-
940
50
25
40
Max.
-
-
1.5
100
-
-
-
-
Unit
mW/sr
V
碌A
nm
nm
deg.
P1
1
2
