3SK255 Datasheet

IC型號：
3SK255
PDF描述：
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-...
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57.12KB
PDF頁數(shù)：
8頁
芯片廠家：
NEC

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK255

RF AMPLIFIER FOR UHF TUNER

N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS SUPER MINI MOLD

FEATURES

鈥?Low V

Use

鈥?Driving Battery

鈥?Low Noise Figure :

鈥?High Power Gain :

NF = 1.8 dB TYP. (f = 900 MHz)

= 18.0 dB TYP. (f = 900 MHz)

Embossed Type Taping

1.25

PACKAGE DIMENSIONS

= 3.5 V)

0.3

+0.1

鈥?.05

(Unit: mm)

2.1鹵0.2

1.25鹵0.1

0.3

+0.1

鈥?.05

鈥?Suitable for uses as RF amplifier in UHF TV tuner.

鈥?Small Package

4 Pins Super Mini Mold

2.0鹵0.2

0.65

鈥?Automatically Mounting :

ABSOLUTE MAXIMUM RATINGS (T

= 25

擄

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Gate1 to Drain Voltage

Gate2 to Drain Voltage

Drain Current

Total Power Dissipation

Channel Temperature

Storage Temperature

*1:

鈮?/div>

10 k鈩?/div>

*2:

Free air

DSX

G1S

G2S

G1D

G2D

stg

鹵8

130

125

鈥?5 to +125

擄C

0.60

0.4

+0.1

鈥?.05

0.9鹵0.1

0.3

PIN CONNECTIONS

Source

Drain

Gate2

Gate1

PRECAUTION

Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage

or fields.

Document No. P10586EJ3V0DS00 (3rd edition)

Date Published June 1996 P

Printed in Japan

0 to 0.1

漏

0.15

+0.1

鈥?.05

0.3

+0.1

鈥?.05

(1.3)

1993

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