DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK253
RF AMPLIFIER FOR UHF TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
鈥?Low V
DD
Use
鈥?Driving Battery
:
(V
DS
= 3.5 V)
NF = 1.8 dB TYP. (f = 900 MHz)
G
PS
= 18.0 dB TYP. (f = 900 MHz)
Embossed Type Taping
2.9鹵0.2
(1.8)
PACKAGE DIMENSIONS
(Unit: mm)
2.8
+0.2
鈥?.3
1.5
+0.2
鈥?.1
2
3
0.4
+0.1
鈥?0.05
4
0.4
+0.1
鈥?0.05
0.95
鈥?Low Noise Figure :
鈥?High Power Gain :
鈥?Suitable for use as RF amplifier in UHF TV tuner.
鈥?Automatically Mounting :
鈥?Package
:
4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1:
R
L
鈮?/div>
10 k鈩?/div>
*2:
Free air
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
鹵8
*1
鹵8
*1
18
18
25
200
*2
125
鈥?5 to +125
V
V
0.85
1
V
V
1.1
+0.2
鈥?0.1
5擄
5擄
V
mA
mW
擄C
擄C
0.8
5擄
0 to 0.1
5擄
PIN CONNECTIONS
1.
2.
3.
4.
Source
Drain
Gate2
Gate1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
fields.
Document No. P10583EJ2V0DS00 (2nd edition)
(Previous No. TD-2372)
Date Published August 1995 P
Printed in Japan
漏
0.16
+0.1
鈥?0.06
0.4
+0.1
鈥?0.05
0.6
+0.1
鈥?.05
(1.9)
1993
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